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| CJD41C NPN CJD42C PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MARKING CODE: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Base Current IB Power Dissipation PD Power Dissipation (TA=25C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JC Thermal Resistance JA 100 100 5.0 6.0 10 2.0 20 1.75 -65 to +150 6.25 71.4 UNITS V V V A A A W W C C/W C/W ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL ICEO ICES IEBO BVCEO VCE(SAT) VBE(ON) hFE hFE fT hfe TEST CONDITIONS VCE=60V VCE=100V VEB=5.0V IC=30mA IC=6.0A, IB=600mA VCE=4.0V, IC=6.0A VCE=4.0V, IC=300mA VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz VCE=10V, IC=500mA, f=1.0kHz 30 15 3.0 20 75 MHz 100 1.5 2.0 MIN MAX 50 10 500 UNITS A A A V V V R1 (26-September 2002) Central TM Semiconductor Corp. CJD41C NPN CJD42C PNP COMPLEMENTARY SILICON POWER TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (26-September 2002) |
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